SCS210AG Datasheet, PDF (1/6 Pages) Rohm – SiC Schottky Barrier Diode

SCS210AG
SiC Schottky Barrier Diode
V_R
650V
I_F
10A
Q_C
15nC
lFeatures
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
lConstruction
Silicon carbide epitaxial planer type
lOutline
TO-220AC
(1)
Datasheet
(2) ⁽³⁾
lInner circuit
(1)
(1) Cathode
(2) Cathode
(3) Anode
(2)
(3)
lPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Tube
-
-
50
C
SCS210AG
lAbsolute maximum ratings (Tj = 25°C)
Parameter
Symbol
Value
Unit
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Continuous forward current
Surge no repetitive forward current
Repetitive peak forward current
Total power disspation
V_RM
650
V
V_R
650
V
I_F
10*¹
A
40*²
A
I_FSM
150*³
A
31*⁴
A
I_FRM
41*⁵
A
P_D
78*⁶
W
Junction temperature
Tj
175
°C
Range of storage temperature
Tstg
-55 to +175
°C
*1 Tc=133°C *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ms square, Tj=25°C
*4 PW=8.3ms sinusoidal, Tj=150°C *5 Tc=100°C, Tj=150°C, Duty cycle=10% *6 Tc=25°C
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2013.04 - Rev.B