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| SCS208AJ Datasheet, PDF (1/6 Pages) Rohm – SiC Schottky Barrier Diode | |||
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SCS208AJ
SiC Schottky Barrier Diode
VR
650V
IF
8A
QC
13nC
ï¬Features
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
ï¬Construction
Silicon carbide epitaxial planer type
ï¬Outline
LPT(L)
<TO-263AB>
Datasheet
(1)
ï¬Inner circuit
(2)
(3)
(4)
(1)
(1) Cathode
(2) N / C
(3) Cathode
(4) Anode
(2) (3) (4)
ï¬Packaging specifications
Packaging
Embossed tape
Reel size (mm)
330
Tape width (mm)
Type
Basic ordering unit (pcs)
24
1,000
Packing code
TLL
Marking
SCS208AJ
ï¬Absolute maximum ratings (Tj = 25°C)
Parameter
Symbol
Value
Unit
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Continuous forward current
Surge no repetitive forward current
Repetitive peak forward current
Total power dissipation
VRM
650
V
VR
650
V
IF
8*1
A
31*2
A
IFSM
118*3
A
25*4
A
IFRM
32*5
A
PD
62*6
W
Junction temperature
Tj
175
°C
Range of storage temperature
Tstg
ï55 to ï«175
°C
*1 Tc=134°C *2 PW=8.3ms sinusoidal,Tj=25°C
*3 PW=10ïs square,Tj=25°C *4 PW=8.3ms sinusoidal, Tj=150°C
*5 Tc=100°C,Tj=150°C,Duty cycle=10% *6 Tc=25°C
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/4
2017.06 - Rev.D
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