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| SCS206AJ Datasheet, PDF (1/6 Pages) Rohm – SiC Schottky Barrier Diode | |||
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SCS206AJ
SiC Schottky Barrier Diode
VR
650V
IF
6A
QC
9nC
lFeatures
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
lConstruction
Silicon carbide epitaxial planer type
lOutline
LPT(L)
<TO-263AB>
Datasheet
(1)
(2) (3)
(4)
lInner circuit
(1)
(1) Cathode
(2) N / C
(3) Cathode
(4) Anode
(2) (3) (4)
lPackaging specifications
Packaging
Embossed tape
Reel size (mm)
330
Tape width (mm)
Type
Basic ordering unit (pcs)
24
1,000
Taping code
TLL
Marking
SCS206AJ
lAbsolute maximum ratings (Tj = 25°C)
Parameter
Symbol
Value
Unit
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Continuous forward current
Surge no repetitive forward current
Repetitive peak forward current
Total power dissipation
VRM
650
V
VR
650
V
IF
6*1
A
24*2
A
IFSM
91*3
A
18*4
A
IFRM
25*5
A
PD
48*6
W
Junction temperature
Tj
175
°C
Range of storage temperature
Tstg
-55 to +175
°C
*1 Tc=135°C *2 PW=8.3ms sinusoidal,Tj=25°C
*3 PW=10ms square,Tj=25°C *4 PW=8.3ms sinusoidal, Tj=150°C
*5 Tc=100°C,Tj=150°C,Duty cycle=10% *6 Tc=25°C
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/5
2013.04 - Rev.B
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