SCS120KE2 Datasheet, PDF (1/4 Pages) Rohm – SiC Schottky Barrier Diode

SCS120KE2
SiC Schottky Barrier Diode
SCS120KE2
.
Applications
General rectification
Dimensions (Unit : mm)
Case
1.98
15.90
5.03
Structure
Case
Features
1)Shorter recovery time
2)Reduced temperature dependence
3)High-speed switching possible
2.40
3.00
(1) (2) (3)
Construction
Silicon carbide epitaxial planer type
0.60
1.20
5.45
2.03
ROHM : ï¼´O-247
(Unit : mm)
(1) Anode
(2) Cathode
(3) Anode
Absolute maximum ratings (Tj=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
1200
V
Reverse voltage (DC)
V_R
1200
V
Continuous forward forward current *⁶
I_F
10/ 20 *¹
A
Surge no repetitive forward current *⁶
I_FSM
45 / 90 *²
190 / 380*³
A
A
Repetitive peak forward current *⁶
I_FRM
30 / 58*⁴
A
Total power disspation *⁶
P_D
115 / 210*⁵
W
Junction temperature
Tj
175
°C
Range of storage temperature
Tstg
55 to 175
°C
Junction to case *⁶
Rth(j-c)
1.3 / 0.70
°C / W
(*1)Tc=135°C / 132°C (*2)PW=8.3ms sinusoidal,Tj=25°C
(*3)PW=10s square,Tj=25°C (*4)Tc=120°C,Tj=150°C,Duty cycle=10% (*5)Tc=25°C (*6)Per Leg / Per Device
Electrical characteristics (Tj=25°C) [Per Leg]
Parameter
Symbol
DC blocking voltage
V_DC
Forward voltage
V_F
Reverse current
I_R
Total capacitance
C
Total capacitive charge
Qc
Switching time
tc
Min.
1200
-
-
-
-
-
-
-
-
Typ.
-
1.50
2.00
10
120
650
50
34
16
Max.
-
1.70
-
200
-
-
-
-
-
Unit
Conditions
V
I_R=0.2mA
V
I_F=10A,Tj=25°C
V
I_F=10A,Tj=175°C
μA
V_R=1200V,Tj=25°C
μA
V_R=1200V,Tj=175°C
pF
V_R=1V,f=1MHz
pF
V_R=800V,f=1MHz
nC
V_R=800V,di/dt=500A/μs
ns
V_R=800V,di/dt=500A/μs
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2012.04 - Rev.A