SCS110AG_1104 Datasheet, PDF (1/4 Pages) Rohm – SiC Schottky Barrier Diode

SiC Schottky Barrier Diode
SCS110AG
Applications
Switching power supply
Dimensions (Unit : mm)
Features
1)Shorter recovery time
2)Reduced temperature dependence
3)High-speed switching possible
Construction
Silicon carbide epitaxial planer type
Structure
ROHM : ï¼´O-220AC
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive)
V_RM
600
V
Reverse voltage (DC)
V_R
600
V
Continuous forward current (*1)
I_F
10
A
Forward current surge peak (60Hz・1cyc) (*2)
I_FSM
40
A
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to 150
°C
(*1)Tc=117°C max
(*2)PW=8.3ms sinusoidal
Electrical characteristics (Ta=25°C)
Parameter
DC blocking voltage
Forward voltage
Reverse current
Total capacitance
Total capacitive charge
Switching time
Thermal resistance
Symbol
V_DC
V_F
I_R
C
Qc
tc
R_th(j-c)
Min.
600
-
-
-
-
-
-
-
Typ. Max.
-
-
1.5 1.7
2.0 200
430
-
47
-
16
-
15
-
-
1.8
Unit
V
V
μA
pF
pF
nC
ns
°C/W
Conditions
I_R=0.2mA
I_F=10A
V_R=600V
V_R=1V,f=1MHz
V_R=600V,f=1MHz
V_R=400V,di/dt=350A/μs
V_R=400V,di/dt=350A/μs
junction to case
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2011.04 - Rev.A