SCS110AGC Datasheet, PDF (1/4 Pages) Rohm – SiC Schottky Barrier Diode

SiC Schottky Barrier Diode
SCS110AG
Applications
Switching power supply
Dimensions (Unit : mm)
Features
1)Shorter recovery time
2)Reduced temperature dependence
3)High-speed switching possible
Construction
Silicon carbide epitaxial planer type
Data Sheet
Structure
ROHM : ï¼´O-220AC
Absolute maximum ratings (Tj=25°C)
Parameter
Symbol
Limits
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Continuous forward current
Surge no repetitive forward current
Repetitive peak forward current
Total power disspation
Junction temperature
V_RM
600
V_R
600
I_F
10*¹
I_FSM
40*²
160*³
I_FRM
42*⁴
P_D
83*⁵
Tj
175
Range of storage temperature
Tstg
55 to 175
Junction to case
Rth(j-c)
1.8
(*1)Tc=134°C (*2)PW=8.3ms sinusoidal,Tj=25°C
(*3)PW=10s square,Tj=25°C (*4)Tc=100°C,Tj=150°C,Duty cycle=10% (*5)Tc=25°C
Electrical characteristics (Tj=25°C)
Parameter
DC blocking voltage
Forward voltage
Reverse current
Total capacitance
Total capacitive charge
Switching time
Symbol Min. Typ. Max.
V_DC
600
-
-
-
1.5 1.7
V_F
-
1.82
-
I_R
-
2
200
-
40
-
-
430
-
C
-
47
-
Qc
-
16
-
tc
-
15
-
Unit
V
V
A
A
A
A
W
°C
°C
°C / W
Unit
Conditions
V
I_R=0.2mA
V
I_F=10A,Tj=25°C
V
I_F=10A,Tj=175°C
μA
V_R=600V,Tj=25°C
μA
V_R=600V,Tj=175°C
pF
V_R=1V,f=1MHz
pF
V_R=600V,f=1MHz
nC
V_R=400V,di/dt=350A/μs
ns
V_R=400V,di/dt=350A/μs
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2012.09 - Rev.C