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| SCS108AG_1104 Datasheet, PDF (1/4 Pages) Rohm – SiC Schottky Barrier Diode | |||
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SiC Schottky Barrier Diode
SCS108AG
zApplications
Switching power supply
zDimensions (Unit : mm)
zFeatures
1)Shorter recovery time
2)Reduced temperature dependence
3)High-speed switching possible
zConstruction
Silicon carbide epitaxial planer type
zStructure
ROHM : Ì©O-220AC 2L
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive)
VRM
600
V
Reverse voltage (DC)
VR
600
V
Continuous forward current(*1)
IF
8
A
Forward current surge peak (60Hzɾ1cyc) (*2)
IFSM
29
A
Junction temperature
Tj
150
°C
Storage temperature
Tstg
â55 to +150
°C
(*1)Tc=120°C max
(*2)PW=8.3ms sinusoidal
zElectrical characteristics (Ta=25°C)
Parameter
DC blocking voltage
Forward voltage
Reverse current
Total capacitance
Total capacitive charge
Switching time
Thermal resistance
Symbol
VDC
VF
IR
C
Qc
tc
Rth(j-c)
Min.
600
-
-
-
-
-
-
-
Typ. Max.
-
-
1.5 1.7
1.6 160
345
-
38
-
15
-
15
-
-
2.0
Unit
V
V
µA
pF
pF
nC
ns
°C/W
Conditions
IR=0.16mA
IF=8A
VR=600V
VR=1V,f=1MHz
VR=600V,f=1MHz
VR=400V,di/dt=300A/µs
VR=400V,di/dt=300A/µs
junction to case
www.rohm.com
©2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.04 - Rev.A
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