SCS108AG Datasheet, PDF (1/1 Pages) Rohm – SiC Schottky Barrier Diodes

SCS108AG | SiC Schottky Barrier Diodes | Discrete Semiconductors | ROHM CO., LTD. Page 1 of 1
SiC Schottky Barrier Diodes
SCS108AG
[ Product description ]
Switching loss reduced, enabling high-speed switching . (2-pin package)
Features
• Shorter recovery time
• Reduced temperature dependence
• High-speed switching possible
Product specifications
Absolute maximum ratings (Ta=25ºC)
Rated parameters
Standard value Conditions
Repetitive peak reverse voltage V_RM(V)
600
Reverse voltage(DC) V_R(V)
600
Average rectified forward current I_O(A)
8
Forward current surge peak I_FSM(A)
32 60Hz/1cyc
Junction temperature Tj(ºC)
150
Storage temperature Tstg(ºC)
-55 to +150
Outline
9.8x15.4(t=4.4)
Dimensions
Equivalent circuit
diagram
Copyright © 1997-2011 ROHM CO.,LTD.
*The contents described here are just outline for introduction.
Please obtain the specification sheets from us for thorough check before use.
http://www.rohm.com/products/discrete/sic/sic_schottky_barrier/scs108ag/print.html
2/16/2011