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| SCH2080KE_17 Datasheet, PDF (1/14 Pages) Rohm – N-channel SiC power MOSFET | |||
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SCH2080KE
N-channel SiC power MOSFET co-packaged with SiC-SBD
Datasheet
VDSS
RDS(on) (Typ.)
ID
PD
1200V
80mï
40A
262W
ï¬Features
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Low VSD
5) Easy to parallel
6) Simple to drive
7) Pb-free lead plating ; RoHS compliant
ï¬Application
ã»Solar inverters
ã»DC/DC converters
ã»Induction heating
ã»Motor drives
ï¬Outline
TO-247
ï¬Inner circuit
D(2)
G(1)
*1 *2
S(3)
(1) Gate
(2) Drain
(3) Source
*1 Body Diode
*2 SBD
ï¬Packaging specifications
Packing
Tube
Reel size (mm)
-
Tape width (mm)
-
Type
Basic ordering unit (pcs)
30
Packing code
C
Marking
SCH2080KE
ï¬Absolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Tc = 25°C
Tc = 100°C
Pulsed drain current
Gate - Source voltage (DC)
Gate - Source surge voltage (Tsurge Ë 300nsec)
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
Symbol
Value
Unit
VDSS
1200
V
ID *1
40
A
ID *1
28
A
ID,pulse *2
80
A
VGSS
ï6 to 22
V
VGSS-surge*3
ï10 to 26
V
PD
262
W
Tj
175
°C
Tstg
ï55 to ï«175
°C
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/12
2017.06 - Rev.G
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