SCH2080KE Datasheet, PDF (1/13 Pages) Rohm – N-channel SiC power MOSFET co-packaged with SiC-SBD

SCH2080KE
SCH2080KE
N-channel SiC power MOSFET co-packaged with SiC-SBD
Datasheet
V_DSS
R_DS(on) (Typ.)
I_D
P_D
1200V
80m
35A
179W
Features
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Low V_SD
5) Easy to parallel
6) Simple to drive
7) Pb-free lead plating ; RoHS compliant
Application
・Solar inverters
・DC/DC converters
・Induction heating
・Motor drives
Outline
TO-247
Inner circuit
(1) (2) (3)
D(2)
G(1)
*1 *2
S(3)
(1) Gate
(2) Drain
(3) Source
*1 Body Diode
*2 SBD
Packaging specifications
Packing
Reel size (mm)
Tube
-
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
-
30
-
SCH2080KE
Absolute maximum ratings (T_a = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
T_c = 25°C
T_c = 100°C
Pulsed drain current
Gate - Source voltage
Power dissipation (T_c = 25°C)
Junction temperature
Range of storage temperature
Symbol
Value
Unit
V_DSS
1200
V
I_D ^*1
35
A
I_D ^*1
22
A
I_D,pulse ^*2
80
A
V_GSS
6 to 22
V
P_D
179
W
T_j
150
°C
T_stg
55 to 150
°C
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1/12
2012.09 - Rev.B