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| S6301 Datasheet, PDF (1/4 Pages) Rohm – SiC Schottky Barrier Diode Bare Die | |||
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S6301
SiC Schottky Barrier Diode Bare Die
VR
1200V
IF
5A*1
QC
17nC
lFeatures
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
lInner circuit
(C)
(A)
lConstruction
Silicon carbide epitaxial planer type
Schottky diode
Data Sheet
(C) Cathode
(A) Anode
lAbsolute maximum ratings (Tj = 25°C)
Parameter
Symbol
Value
Unit
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Continuous forward current
Surge no repetitive forward current
Repetitive peak forward current
Junction temperature
VRM
1200
V
VR
1200
V
IF
5*1
A
23*2
A
IFSM
87*3
A
18*4
A
IFRM
25*5
A
Tj
175
°C
Range of storage temperature
Tstg
-55 to +175
°C
*1 Limited by Tj *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ms square, Tj=25°C
*4 PW=8.3ms sinusoidal, Tj=150°C *5 Duty cycle=10%, limited by Tj
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© 2014 ROHM Co., Ltd. All rights reserved.
1/3
2014.05 - Rev.A
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