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S4105 Datasheet, PDF (1/13 Pages) Rohm – N-channel SiC power MOSFET bare die | |||
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S4105
N-channel SiC power MOSFET bare die
VDSS
RDS(on) (Typ.)
ID
1200V
160mï
17A*1
Datasheet
ï¬Features
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
5) Simple to drive
ï¬Inner circuit
(1)
(2)
*1
(3)
(1) Gate
(2) Drain
(3) Source
*1 Body Diode
ï¬Application
ã»Solar inverters
ã»DC/DC converters
ã»Switch mode power supplies
ã»Induction heating
ã»Motor drives
ï¬Absolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Tc = 25°C
Pulsed drain current
Gate - Source voltage
Gate-Source Surge Voltage
Recommended Drive Voltage
Junction temperature
Range of storage temperature
Symbol
Value
Unit
VDSS
1200
V
ID *1
17
A
ID,pulse *2
42
A
VGSS
ï4 to 22
V
VGSS_surge
ï4 to 22
V
VGS_op
0 / 18
V
Tj
175
°C
Tstg
ï55 to ï«175
°C
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1/11
2017.08 - Rev.B
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