S4102 Datasheet, PDF (1/13 Pages) Rohm – N-channel SiC power MOSFET bare die

S4102
N-channel SiC power MOSFET bare die
V_DSS
R_DS(on) (Typ.)
I_D
1200V
30m
72A^*1
Datasheet
Features
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
5) Simple to drive
Inner circuit
(1)
(2)
*1
(3)
(1) Gate
(2) Drain
(3) Source
*1 Body Diode
Application
・Solar inverters
・DC/DC converters
・Switch mode power supplies
・Induction heating
・Motor drives
Absolute maximum ratings (T_a = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
T_c = 25°C
Pulsed drain current
Gate - Source voltage
Gate-Source Surge Voltage
Recommended Drive Voltage
Junction temperature
Range of storage temperature
Symbol
Value
Unit
V_DSS
1200
V
I_D ^*1
72
A
I_D,pulse ^*2
180
A
V_GSS
4 to 22
V
V_{GSS_surge}
4 to 22
V
V_{GS_op}
0 / 18
V
T_j
175
°C
T_stg
55 to 175
°C
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2017.08 - Rev.B