S2409 Datasheet, PDF (1/13 Pages) Rohm – N-channel SiC power MOSFET bare die

S2409
N-channel SiC power MOSFET bare die
V_DSS
R_DS(on) (Typ.)
I_D
1700V
100mW
34A^*1
lFeatures
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
5) Simple to drive
lInner circuit
Datasheet
(1) Gate
(2) Drain
(3) Source
*1 Body Diode
lApplication
・Solar inverters
・DC/DC converters
・Switch mode power supplies
・Induction heating
・Motor drives
lAbsolute maximum ratings (T_a = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
T_c = 25°C
Gate - Source voltage (DC)
Gate - Source surge voltage (t_surge < 300nsec)
Junction temperature
Range of storage temperature
Symbol
Value
Unit
V_DSS
1700
V
I_D ^*1
34
A
I_D,pulse ^*2
80
A
V_GSS
-6 to 22
V
V_{GSS_surge*3}
-10 to 26
V
T_j
175
°C
T_stg
-55 to +175
°C
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/11
2017.01 - Rev.A