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| S2305_16 Datasheet, PDF (1/13 Pages) Rohm – N-channel SiC power MOSFET bare die | |||
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S2305
N-channel SiC power MOSFET bare die
VDSS
RDS(on) (Typ.)
ID
1200V
450mW
10A*1
Data Sheet
lFeatures
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
5) Simple to drive
lInner circuit
(D)
(G)
(S)
(G) Gate
(D) Drain
(S) Source
*1 Body Diode
lApplication
⢠Solar inverters
⢠DC/DC converters
⢠Switch mode power supplies
⢠Induction heating
⢠Motor drives
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Tc = 25°C
Pulsed drain current
Gate - Source voltage (DC)
Gate - Source surge voltage (Tsurge Ë 300nsec)
Junction temperature
Range of storage temperature
Symbol
Value
Unit
VDSS
1200
V
ID *1
10
A
ID,pulse *2
25
A
VGSS
-6 to 22
V
VGSS-surge*3
-10 to 26
V
Tj
175
°C
Tstg
-55 to +175
°C
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© 2016 ROHM Co., Ltd. All rights reserved.
1/11
2016.02 - Rev.C
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