S2206 Datasheet, PDF (1/12 Pages) Rohm – N-channel SiC power MOSFET bare die

S2206
N-channel SiC power MOSFET bare die
V_DSS
R_DS(on) (Typ.)
I_D
650V
120mW
29A*¹
Data Sheet
lFeatures
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
5) Simple to drive
lInner circuit
(D)
(G)
(S)
(G) Gate
(D) Drain
(S) Source
*1 Body Diode
lApplication
• Solar inverters
• DC/DC converters
• Switch mode power supplies
• Induction heating
• Motor drives
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
T_c = 25°C
Pulsed drain current
Gate - Source voltage
Junction temperature
Range of storage temperature
Symbol
Value
Unit
V_DSS
650
V
I_D ^*1
29
A
I_D,pulse ^*2
72
A
V_GSS
-6 to 22
V
T_j
175
°C
T_stg
-55 to +175
°C
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2014.07 - Rev.A