RZM002P02T2L Datasheet, PDF (1/5 Pages) Rohm – 1.2V Drive Pch MOSFET

1.2V Drive Pch MOSFET
RZM002P02
zStructure
Silicon P-channel MOSFET
zDimensions (Unit : mm)
VMT3
zFeatures
1) High Speed Switching.
2) Small package (VMT3).
3) Ultra Low Voltage drive. (1.2V drive)
zApplications
Switching
(1)Gate
(2)Source
(3)Drain
1.2
0.32
(3)
0.22
(1)(2)
0.4 0.4
0.8
0.13
0.5
Abbreviated symbol : YK
zInner circuit
(3)
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RZM002P02
Taping
T2L
8000
∗2
(1)
∗1
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Gate
(2) Source
(3) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Continuous
Source current (Body diode)
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
Symbol
VDSS
VGSS
ID
IDP ^∗1
IS
ISP ^∗1
PD ^∗2
Tch
Tstg
Limits
−20
±10
±200
±800
−100
−800
150
150
−55 to +150
zThermal resistance
Parameter
Channel to ambient
∗ Each terminal mounted on a recommended land
Symbol
Rth(ch-a) ∗
Limits
833
Unit
V
V
mA
mA
mA
mA
mW
°C
°C
Unit
°C/W
www.rohm.com
○^c 2009 ROHM Co., Ltd. All rights reserved.
1/4
2009.06 - Rev.B