RZE002P02 Datasheet, PDF (1/5 Pages) Rohm – 1.2V Drive Pch MOSFET

1.2V Drive Pch MOSFET
RZE002P02
zStructure
Silicon P-channel MOSFET
zFeatures
1) High speed switching.
2) Small package (EMT3).
3) 1.2V drive.
zApplications
Switching
zPackage specifications
Package
Type
Code
Basic ordering unit (pieces)
RZE002P02
Taping
TL
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Souce current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
Symbol
VDSS
VGSS
ID
IDP ^∗1
IS
ISP ^∗1
PD ∗2
Tch
Tstg
Limits
−20
±10
±200
±800
−100
−800
150
150
−55 to +150
zDimensions (Unit : mm)
EMT3
1.6
0.7
0.3
0.55
(3)
(2) (1)
0.2
0.2
0.15
0.5 0.5
1.0
(1)Source
(2)Gate
(3)Drain
Abbreviated symbol : YK
zInner circuit
(3)
∗2
(2)
∗1
(1)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Source
(2) Gate
(3) Drain
Unit
V
V
mA
mA
mA
mA
mW
°C
°C
zThermal resistance
Parameter
Channel to ambient
∗ Each terminal mounted on a recommended land
Symbol
Rth(ch-a) ∗
Limits
833
Unit
°C/W
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2009.06 - Rev.A