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| RYB002N05 Datasheet, PDF (1/6 Pages) Rohm – 0.9V Drive Nch MOSFET | |||
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0.9V Drive Nch MOSFET
RYB002N05
ï¬ Structure
Silicon N-channel MOSFET
ï¬Features
1) High speed switing.
2) Small package(VMN3).
3)Ultra low voltage drive(0.9V drive).
ï¬ Application
Switching
ï¬ Dimensions (Unit : mm)
VMN3
0.22
(3)
0.16
(1)
(2)
0.17
0.35
0.37
0.6
Abbreviated symbol : QJ
ï¬ Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RYB002N05
Taping
T2L
8000
ï¡
ï¬ Absolute maximum ratings (Ta = 25ï°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
50
V
VGSS
ï±8
V
ID
ï±200
mA
IDP *1
ï±800
mA
IS
125
mA
ISP *1
800
mA
PD *2
150
mW
Tch
150
ï°C
Tstg ï55 to +150 ï°C
*1 Pwï£10ïs, Duty cycleï£1%
*2 Each terminal mounted on a recommended land.
ï¬ Inner circuit
(3)
â1
â2
(1)
â1 BODY DIODE
â2 ESD PROTECTION DIODE
(2)
(1) GATE
(2) SOURCE
(3) DRAIN
ï¬ Thermal resistance
Parameter
Channel to Ambient
* Each terminal mounted on a recommended land.
Symbol
Rth (ch-a)*
Limits
833
Unit
ï°C / W
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.08 - Rev.A
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