RUQ050N02_10 Datasheet, PDF (1/5 Pages) Rohm – 1.5V Drive Nch MOSFET

1.5V Drive Nch MOSFET
RUQ050N02
Structure
Silicon N-channel MOSFET
Features
1) Low On-resistance.
2) Space saving, small surface mount package (TSMT6).
3) 1.5V drive
Applications
Switching
Dimensions (Unit : mm)
TSMT6
Each lead has same dimensions
Abbreviated symbol : XG
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RUQ050N02
Taping
TR
3000
Inner circuit
(6)
(5)
(4)
∗2
∗1
(1)
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Drain
(2) Drain
(3) Gate
(3) _{(4) Source}
(5) Drain
(6) Drain
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
20
V
Gate-source voltage
VGSS
±10
V
Drain current
Continuous
ID
±5.0
A
Pulsed
IDP ^∗1
±10
A
Source current
Continuous
IS
1.0
A
(Body diode)
Pulsed
ISP ^∗1
10
A
Total power dissipation
PD ^∗2
1.25
W
Channel temperature
Tch
150
°C
Range of storage temperature
Tstg
−55 to +150
°C
∗1 Pw 10μs, Duty cycle 1%
∗2 Mounted on a ceramic board
Thermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol
Rth(ch-a) ^∗
Limits
100
Unit
°C/W
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2010.08 - Rev.A