RUM003N02 Datasheet, PDF (1/4 Pages) Rohm – 2.5V Drive Nch MOSFET

Transistor
2.5V Drive Nch MOSFET
RUM003N02
RUM003N02
zStructure
Silicon N-channel
MOSFET
zDimensions (Unit : mm)
VMT3
zApplications
Switching
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive (2.5V) makes this device ideal for
portable equipment.
4) Drive circuits can be simple.
5) Parallel use is easy.
(1)Base(IN)(Gate)
(2)Emitter(GND)(Source)
(3)Collector(OUT)(Drain) _{Abbreviated symbol : QT}
zPackaging specifications
Package
Type
Code
Basic ordering unit
(pieces)
RUM003N02
Taping
T2L
8000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
20
V
Gate-source voltage
VGSS
±8
V
Continuous
ID
±300
mA
Drain current
Pulsed
IDP^∗1
±600
mA
Total power dissipation
PD^∗2
150
mW
Channel temperature
Tch
150
°C
Range of storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
zEquivalent circuit
Drain
Gate
∗2
∗1
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Source
zThermal resistance
Parameter
Channel to ambient
∗ Each terminal mounted on a recommended land
Symbol
Rth(ch-a) ^∗
Limits
833
Unit
°C / W
Rev.A
1/3