RUM002N02 Datasheet, PDF (1/5 Pages) Rohm – 1.2V Drive Nch MOSFET

1.2V Drive Nch MOSFET
RUM002N02
zStructure
Silicon N-channel
MOSFET
zDimensions (Unit : mm)
VMT3
zApplications
Switching
zFeatures
1) Fast switching speed.
2) Low voltage drive (1.2V) makes this
device ideal for portable equipment.
3) Drive circuits can be simple.
(1)Gate
(2)Souce
(3)Drain
Abbreviated symbol : QR
zInner circuit
(3)
zPackaging specifications
Package
Type
Code
Basic ordering unit
(pieces)
RUM002N02
Taping
T2L
8000
(1)
∗2
∗1
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Gate
(2) Source
(3) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
20
V
Gate-source voltage
VGSS
±8
V
Continuous
ID
±200
mA
Drain current
Pulsed
IDP^∗1
±400
mA
Total power dissipation
PD^∗2
150
mW
Channel temperature
Tch
150
°C
Range of storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
zThermal resistance
Parameter
Channel to ambient
∗ Each terminal mounted on a recommended land
Symbol
Rth(ch-a) ^∗
Limits
833
Unit
°C / W
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2009.07 - Rev.A