RUF025N02 Datasheet, PDF (1/5 Pages) Rohm – 1.5V Drive Nch MOSFET

Transistors
1.5V Drive Nch MOSFET
RUF025N02
RUF025N02
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low On-resistance.
2) Space saving, small surface mount package (TUMT3).
3) Low voltage drive (1.5V drive).
zApplications
Switching
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RUF025N02
Taping
TL
3000
zDimensions (Unit : mm)
TUMT3
(1) Gate
(2) Source
(3) Drain
Abbreviated symbol : XE
zInner circuit
(3)
(1)
∗2
∗1
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
20
V
Gate-source voltage
VGSS
±10
V
Drain current
Continuous
ID
±2.5
A
Pulsed
IDP ^∗1
±5
A
Source current
Continuous
IS
0.6
A
(Body diode)
Pulsed
ISP ^∗1
5
A
Total power dissipation
PD ^∗2
0.8
W
Channel temperature
Tch
150
°C
Range of storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol
Rth(ch-a) ^∗
Limits
156
Unit
°C/W
(1) Gate
(2) Source
(3) Drain
1/4