RUF015N02 Datasheet, PDF (1/4 Pages) Rohm – 1.8V Drive Nch MOSFET

Transistors
1.8V Drive Nch MOSFET
RUF015N02
RUF015N02
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low On-resistance.
2) Space saving, small surface mount package (TUMT3).
3) Low voltage drive (1.8V drive).
zApplications
Switching
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RUF015N02
Taping
TL
3000
zDimensions (Unit : mm)
TUMT3
(1) Gate
(2) Source
(3) Drain
Abbreviated symbol : PS
zInner circuit
(3)
(1)
∗2
∗1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP ^∗1
IS
ISP ^∗1
PD ^∗2
Tch
Tstg
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Limits
Unit
20
V
10
V
±1.5
A
±3.0
A
0.6
A
2.4
A
0.8
W
150
°C
−55 to +150
°C
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol
Rth(ch-a) ^∗
Limits
156
Unit
°C/W
(1) Gate
(2) Source
(3) Drain
1/3