RUE003N02_11 Datasheet, PDF (1/4 Pages) Rohm – 1.8V Drive Nch MOSFET

1.8V Drive Nch MOSFET
RUE003N02
Structure
Silicon N-channel
MOSFET
Dimensions (Unit : mm)
EMT3
Features
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive (1.8V) makes this device ideal for
portable equipment.
4) Drive circuits can be simple.
5) Parallel use is easy.
(1)Source
(2)Gate
(3)Drain
Abbreviated symbol : QT
Applications
Switching
Packaging specifications
Type
Package
Code
Basic ordering unit
(pieces)
Taping
TL
3000
RUE003N02
Equivalent circuit
Drain
Gate
∗2
∗1
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Source
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
20
V
Gate-source voltage
VGSS
±8
V
Continuous
ID
±300
mA
Drain current
Pulsed
IDP^∗1
±600
mA
Total power dissipation
PD^∗2
150
mW
Channel temperature
Tch
150
°C
Range of storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10μs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
Thermal resistance
Parameter
Channel to ambient
∗ Each terminal mounted on a recommended land
Symbol
Rth(ch-a) ^∗
Limits
833
Unit
°C / W
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2011.05 - Rev.B