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RUE002N05 Datasheet, PDF (1/6 Pages) Rohm – 1.2V Drive Nch MOSFET | |||
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1.2V Drive Nch MOSFET
RUE002N05
ï¬Structure
Silicon N-channel MOSFET
ï¬Features
1) High speed switing.
2) Small package(EMT3).
3) Ultra low voltage drive(1.2V drive).
ï¬Application
Switching
ï¬Dimensions (Unit : mm)ï
Abbreviated symbol : RH
ï¬Packaging specifications
Package
Taping
Type Code
TL
Basic ordering unit (pieces) 3000
RUE002N05
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ï¬Absolute maximum ratings (Ta = 25ï°C)ï
Parameter
Symbol
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Limits
ï¬Inner circuit
(1)
(1) GATE
(2) SOURCE
(3) DRAIN
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
50
V
VGSS
ï±8
V
ID
ï±200
mA
IDP *1
ï±800
mA
IS
125
ISP *1
800
PD *2
150
mA
mA
mW
Tch
150
ï°C
Tstg ï55 to +150 ï°C
*1 Pwï£10ïs, Duty cycleï£1%
*2 Each terminal mounted on a recommended land.
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ï¬Thermal resistanceï
Parameter
Channel to ambient
Symbol
Rth (ch-a)*
Limits
833
ï
Unit
ï°C / W
* Each terminal mounted on a recommended land.
ï
(3)
â1
â2
(2)
â1 BODY DIODE
â2 ESD PROTECTION DIODE
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âc 2010 ROHM Co., Ltd. All rights reserved.
2010.01 - Rev.A
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