 English |
|
|
|
|
|
|
|
| RUB002N02 Datasheet, PDF (1/7 Pages) Rohm – 1.2V Drive Nch MOSFET | |||
| |||
|
Data Sheet
1.2V Drive Nch MOSFET
RUB002N02
ï¬ Structure
Silicon N-channel MOSFET
ï¬Features
1) High speed switing.
2) Small package(VMN3).
3) Ultra low voltage drive(1.2V drive).
ï¬ Application
Switching
ï¬ Dimensions (Unit : mm)
VMN3
0.22
(3)
0.16
(1)
(2)
0.17
0.35
0.37
0.6
Abbreviated symbol : QR
ï¬ Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RUB002N02
Taping
T2CL
8000
ï¡
ï¬ Absolute maximum ratings (Ta = 25ï°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
20
V
VGSS
ï±8
V
ID
ï±200
mA
IDP *1
ï±800
mA
IS
125
mA
ISP *1
800
mA
PD *2
150
mW
Tch
150
ï°C
Tstg ï55 to ï«150 ï°C
*1 Pwï£10ïs, Duty cycleï£1%
*2 Each terminal mounted on a recommended land.
ï¬ Inner circuit
(3)
(1) Gate
(2) Source
(3) Drain
â2
â1
(1)
(2)
â1 ESD PROTECTION DIODE
â2 BODY DIODE
ï¬ Thermal resistance
Parameter
Channel to Ambient
* Each terminal mounted on a recommended land.
Symbol
Rth (ch-a)*
Limits
833
Unit
ï°C / W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.04 - Rev.A
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese