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| RU1L002SN Datasheet, PDF (1/7 Pages) Rohm – 2.5V Drive Nch MOSFET | |||
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Data Sheet
2.5V Drive Nch MOSFET
RU1L002SN
ï¬ Structure
Silicon N-channel MOSFET
ï¬Features
1) Low on-resistance.
2) Low voltage drive (2.5V drive).
3) Small package (UMT3F).
ï¬ Application
Switching
ï¬ Dimensions (Unit : mm)
UMT3F
2.0
0.32
0.9
(3)
(1)
0.65 0.65
1.3
(2)
0.13
Abbreviated symbol : RK
ï¬ Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RU1L002SN
Taping
TCL
3000
ï¡
ï¬ Absolute maximum ratings (Ta = 25ï°C)
Parameter
Symbol Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
60
V
VGSS
ï±20
V
ID
ï±250
mA
IDP *1
ï±1
A
IS
125
mA
ISP *1
1
A
PD *2
200
mW
Tch
150
ï°C
Tstg ï55 to ï«150 ï°C
*1 Pwï£10ïs, Duty cycleï£1%
*2 Each terminal mounted on a recommended land
ï¬ Inner circuit
(3)
(1) Gate
(2) Source
(3) Drain
(1)
â2
â1
(2)
ïª1 ESD PROTECTION DIODE
ïª2 BODY DIODE
ï¬ Thermal resistance
Parameter
Channel to Ambient
* Each terminal mounted on a recommended land
Symbol
Rth (ch-a)*
Limits
625
Unit
ï°C / W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.08 - Rev.A
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