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| RU1C002UN Datasheet, PDF (1/6 Pages) Rohm – 1.2V Drive Nch MOSFET | |||
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Data Sheet
1.2V Drive Nch MOSFET
RU1C002UN
ï¬ Structure
Silicon N-channel MOSFET
ï¬Features
1) Low on-resistance.
2) Low voltage drive(1.2V drive).
ï¬ Application
Switching
ï¬ Dimensions (Unit : mm)
UMT3F
2.0
0.32
0.9
(3)
(1)
0.65 0.65
1.3
(2)
0.13
Abbreviated symbol : QR
ï¬ Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RU1C002UN
Taping
TCL
3000
ï¡
ï¬ Absolute maximum ratings (Ta = 25ï°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
20
V
VGSS
ï±8
V
ID
ï±200
mA
IDP *1 ï±400
mA
PD *2
150
mW
Tch
150
ï°C
Tstg ï55 to ï«150 ï°C
*1 Pwï£10ïs, Duty cycleï£1%
*2 Each terminal mounted on a reference land.
ï¬ Inner circuit
(3)
(1) Gate
(2) Source
(3) Drain
â1
â2
(1)
(2)
ïª1 BODY DIODE
ïª2 ESD PROTECTION DIODE
ï¬ Thermal resistance
Parameter
Channel to Ambient
* Each terminal mounted on a reference land.
Symbol
Rth (ch-a)*
Limits
833
Unit
ï°C / W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/5
2011.09 - Rev.A
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