RTU002P02 Datasheet, PDF (1/3 Pages) Rohm – 2.5V Drive Pch MOSFET

Transistors
2.5V Drive Pch MOS FET
RTU002P02
RTU002P02
zStructure
Silicon P-channel MOS FET
zFeatures
1) Low On-resistance.
2) Low voltage drive (2.5V drive).
zApplications
Switching
zPackage specifications
Package
Type
Code
Basic ordering unit (pieces)
RTU002P02
Taping
T106
3000
zExternal dimensions (Unit : mm)
UMT3
2.0
0.3
(3)
0.9
0.2 0.7
(1) Source
(2) Gate
(3) Drain
(2)
(1)
0.65 0.65
1.3
0.15
Each lead has same dimensions
Abbreviated symbol : TW
zInner circuit
(3)
(2)
∗2
∗1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
Symbol
VDSS
VGSS
ID
IDP ^∗1
PD ^∗2
Tch
Tstg
(1)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Limits
Unit
−20
V
±12
V
±0.25
A
±0.5
A
0.2
W
150
°C
−55 to +150
°C
zThermal resistance
Parameter
Channel to ambient
∗ Each terminal mounted on a recommended land
Symbol
Rth(ch-a) ∗
Limits
625
Unit
°C/W
(1) Source
(2) Gate
(3) Drain
1/2