RTR040N03_06 Datasheet, PDF (1/5 Pages) Rohm – 2.5V Drive Nch MOS FET

Transistors
2.5V Drive Nch MOS FET
RTR040N03
RTR040N03
zStructure
Silicon N-channel
MOS FET
zFeatures
1) Low On-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT3).
zApplication
Power switching, DC / DC converter.
zExternal dimensions (Unit : mm)
TSMT3
2.9
0.4
(3)
1.0MAX
0.85
0.7
(1) (2)
0.95 0.95
1.9
0~0.1
0.16
(1) Gate
(2) Source
(3) Drain
Each lead has same dimensions
Abbreviated symbol : QV
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RTR040N03
Taping
TL
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP ^∗1
IS
ISP ^∗1
PD ^∗2
Tch
Tstg
Limits
30
12
±4.0
±16
0.8
16
1.0
150
−55 to +150
zEquivalent circuit
(3)
Unit
V
V
A
A
A
A
W
°C
°C
(1)
∗2
∗1
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Gate
(2) Source
(3) Drain
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol
Rth (ch-a) ^∗
Limits
125
Unit
°C / W
Rev.A
1/4