RTR020P02 Datasheet, PDF (1/5 Pages) Rohm – Switching (-20V, -2.0A)

Transistors
Switching (−20V, −2.0A)
RTR020P02
RTR020P02
zFeatures
1) Low On-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (TSMT3).
zApplication
Power switching, DC / DC converter.
zStructure
Silicon P-channel
MOS FET
zExternal dimensions (Unit : mm)
TSMT3
2.9±0.1
0.4
+0.1
−0.05
(3)
1.0MAX.
0.85±0.1
0.7±0.1
0~0.1
(1)
0.95 0.95
1.9±0.2
(2)
0.16
+0.1
−0.06
Each lead has same dimensions
Abbreviated symbol : TX
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RTR020P02
Taping
TL
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
−20
V
Gate-source voltage
VGSS
±12
V
Continuous
ID
±2.0
A
Drain current
Pulsed
IDP ^∗1
±8.0
A
Source current
Continuous
IS
−0.8
A
(Body diode)
Pulsed
ISP ^∗1
−3.2
A
Total power dissipation
PD ^∗2
1.0
W
Channel temperature
Tch
150
°C
Range of Storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
zEquivalent circuit
(3)
(1)
∗2
∗1
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Gate
(2) Source
(3) Drain
zThermal resistance (Ta=25°C)
Parameter
Channel to ambient
Symbol
Rth (ch-A)
Limits
125
Unit
°C / W
1/4