RTR020N05TL Datasheet, PDF (1/3 Pages) Rohm – 2.5V Drive Nch MOS FET

Transistors
2.5V Drive Nch MOS FET
RTR020N05
RTR020N05
zStructure
Silicon N-channel MOS FET
zFeatures
1) Low On-resistance.
2) Space saving, small surface mount package (TSMT3).
3) Low voltage drive (2.5V drive).
zApplications
Switching
zPackaging specifications and hFE
Package
Type
Code
Basic ordering unit (pieces)
RTR020N05
Taping
TL
3000
zExternal dimensions (Unit : mm)
TSMT3
2.9
0.4
(3)
1.0MAX
0.85
0.7
(1) (2)
0.95 0.95
1.9
0~0.1
0.16
(1) Gate
(2) Source
(3) Drain
Each lead has same dimensions
Abbreviated symbol : QF
zInner circuit
(3)
(1)
∗2
∗1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP ^∗1
IS
ISP ^∗1
PD ^∗2
Tch
Tstg
Limits
45
12
±2.0
±8
0.8
8
1.0
150
−55 to +150
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol
Rth(ch-a) ^∗
Limits
125
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Unit
V
V
A
A
A
A
W
°C
°C
Unit
°C/W
(1) Gate
(2) Source
(3) Drain
1/2