RTQ045N03FRA Datasheet, PDF (1/6 Pages) Rohm – 2.5V Drive Nch MOS FET

Transistors
2.5V Drive Nch MOS FET
RTQ045N0033FRA
RTQR0T4Q50N4053NF0R3A
AEC-Q101 Qualified
zStructure
Silicon N-channel
MOS FET
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT6) .
zApplication
Power switching, DC / DC converter.
zExternal dimensions (Unit : mm)
TSMT6
2.9
1.9
0.95 0.95
(6) (5) (4)
1.0MAX
0.85
0.7
1pin mark
(1) (2) (3)
0.4
0~0.1
0.16
Each lead has same dimensions
Abbreviated symbol : QM
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RRTTQQ00445NN0033FRA
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
12
V
Drain current
Continuous
Pulsed
ID
IDP ^∗1
±4.5
±18
A
A
Source current
Continuous
IS
1.0
A
(Body diode)
Pulsed
ISP ^∗1
4.0
A
Total power dissipation
PD ^∗2
1.25
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55~+150
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board.
zEquivalent circuit
(6)
(5)
(4)
(6) (5) (4)
∗2
(1) (2) (3)
∗1
(1)
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board.
Symbol
Rth (ch-a) ^∗
Limits
100
Unit
°C / W
Rev.C
1/3