RTQ045N03 Datasheet, PDF (1/4 Pages) Rohm – Switching (30V, 4.5A)

Transistors
Switching (30V, 4.5A)
RTQ045N03
RTQ045N03
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (TSMT6) .
zApplication
Power switching, DC / DC converter.
zStructure
Silicon N-channel
MOS FET
zExternal dimensions (Unit : mm)
TSMT6
2.9±0.1
1.9±0.2
0.95 0.95
(6)
(5)
(4)
1.0MAX.
0.85±0.1
0.7±0.1
0~0.1
(1)
(2)
(3)
(1) Drain ^{1pin mark}
0.4^{+−00..105}
0.16
+0.1
−0.06
(2) Drain
(3) Gate
(4) Source
Each lead has same dimensions
(5) Drain
Abbreviated symbol : QM
(6) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
12
V
Continuous
ID
±4.5
A
Drain current
Pulsed
IDP ^∗
±18
A
Source current
Continuous
IS
1.0
A
(Body diode)
Pulsed
ISP ^∗
4.0
A
Total power dissipation (TC=25°C)
PD
1.25
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55~150
°C
∗1 Pw≤10µs, Duty cycle≤1%
zThermal resistance (Ta=25°C)
Parameter
Channel to ambient
Symbol
Rth (ch-A)
Limits
100
Unit
°C / W
zEquivalent circuit
(6)
(5)
(4)
(6) (5) (4)
∗2
(1) (2) (3)
∗1
(1)
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
Rev.A
1/3