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RTQ035N03FRA Datasheet, PDF (1/6 Pages) Rohm – 2.5V Drive Nch MOSFET | |||
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Transistors
2.5V Drive Nch MOS FET
RTQ035N033FRA
RTQR0T3Q50N3053NF0R3A
AEC-Q101 Qualified
zStructure
Silicon N-channel MOS FET
zFeatures
1) Low On-resistance.
2) Space saving, small surface mount package (TSMT6).
3) Low voltage drive (2.5V drive).
zApplications
Switching
zExternal dimensions (Unit : mm)
TSMT6
2.9
1.9
0.95 0.95
(6) (5) (4)
1.0MAX
0.85
0.7
1pin mark
(1) (2) (3)
0~0.1
0.4
0.16
Each lead has same dimensions
Abbreviated symbol : QP
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RRTTQQ003355NN0033FRA
Taping
TR
3000
zInner circuit
(6)
(5)
(4)
â2
â1
(1)
(2)
â1 ESD PROTECTION DIODE
â2 BODY DIODE
(1) Drain
(2) Drain
(3) Gate
(3) (4) Source
(5) Drain
(6) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
12
V
Drain current
Continuous
ID
±3.5
A
Pulsed
IDP â1
±15
A
Source current
Continuous
IS
1.0
A
(Body diode)
Pulsed
ISP â1
4.0
A
Total power dissipation
PD â2
1.25
W
Channel temperature
Tch
150
°C
Range of storage temperature
Tstg
â55 to +150
°C
â1 Pwâ¤10µs, Duty cycleâ¤1%
â2 Mounted on a ceramic board
zThermal resistance
Parameter
Channel to ambient
â Mounted on a ceramic board
Symbol
Rth(ch-a) â
Limits
100
Unit
°C/W
1/2
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