RTQ035N03 Datasheet, PDF (1/3 Pages) Rohm – 2.5V Drive Nch MOS FET

Transistors
2.5V Drive Nch MOS FET
RTQ035N03
RTQ035N03
zStructure
Silicon N-channel MOS FET
zFeatures
1) Low On-resistance.
2) Space saving, small surface mount package (TSMT6).
3) Low voltage drive (2.5V drive).
zApplications
Switching
zExternal dimensions (Unit : mm)
TSMT6
2.9
1.9
0.95 0.95
(6) (5) (4)
1.0MAX
0.85
0.7
1pin mark
(1) (2) (3)
0.4
0~0.1
0.16
Each lead has same dimensions
Abbreviated symbol : QP
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RTQ035N03
Taping
TR
3000
zInner circuit
(6)
(5)
(4)
∗2
∗1
(1)
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Drain
(2) Drain
(3) Gate
(3) _{(4) Source}
(5) Drain
(6) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
12
V
Drain current
Continuous
ID
±3.5
A
Pulsed
IDP ^∗1
±15
A
Source current
Continuous
IS
1.0
A
(Body diode)
Pulsed
ISP ^∗1
4.0
A
Total power dissipation
PD ^∗2
1.25
W
Channel temperature
Tch
150
°C
Range of storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol
Rth(ch-a) ^∗
Limits
100
Unit
°C/W
1/2