RTQ025P02FRA Datasheet, PDF (1/8 Pages) Rohm – 2.5V Drive Pch MOSFET

Transistor
2.5V Drive Pch MOS FET
RTQ025PP0022FRA
RTQR0T2Q50P2052PF0R2A
AEC-Q101 Qualified
zStructure
Silicon P-channel MOSFET
zFeatures
1) Low On-resistance.(140mΩ at 2.5V)
2) High Power Package.
3) High speed switching.
4) Low voltage drive.(2.5V)
zApplications
DC-DC converter
zExternal dimensions (Unit : mm)
TSMT6
2.9
1.9
0.95 0.95
(6) (5) (4)
1.0MAX
0.85
0.7
1pin mark
(1) (2) (3)
0.4
0~0.1
0.16
Each lead has same dimensions
Abbreviated symbol : TQ
zPackaging specifications
Package
Type
Code
Basic ordering unit
(pieces)
RRTTQQ002255PP0022FRA
Taping
TR
3000
zEquivalent circuit
(6)
(5)
∗2
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain−source voltage
Gate−source voltage
Drain current
Continuous
Pulsed
Symbol
VDSS
VGSS
ID
IDP ^∗1
Source current
(Body diode)
Total power dissipation
Continuous
Pulsed
IS
ISP ^∗1
PD ^∗2
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Tch
Tstg
Limits
−20
±12
±2.5
±10
−1
−4
1.25
150
−55 to +150
(1)
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Unit
V
V
A
A
A
A
W
°C
°C
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board.
Symbol
Rth(ch-a) ^∗
Limits
100
Unit
°C / W
(4)
∗1
(1) Drain
(2) Drain
(3) Gate
(3) _{(4) Source}
(5) Drain
(6) Drain
Rev.A
1/4