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RTQ020N03 Datasheet, PDF (1/3 Pages) Rohm – 2.5V Drive Nch MOS FET | |||
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Transistors
2.5V Drive Nch MOS FET
RTQ020N03
RTQ020N03
zStructure
Silicon N-channel MOS FET
zFeatures
1) Low On-resistance.
2) Space saving, small surface mount package (TSMT6).
3) Low voltage drive (2.5V drive).
zApplications
Switching
zExternal dimensions (Unit : mm)
TSMT6
2.9
1.9
0.95 0.95
(6) (5) (4)
1.0MAX
0.85
0.7
1pin mark
(1) (2) (3)
0~0.1
0.4
0.16
Each lead has same dimensions
Abbreviated symbol : QS
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RTQ020N03
Taping
TR
3000
zInner circuit
(6)
(5)
(4)
â2
â1
(1)
(2)
â1 ESD PROTECTION DIODE
â2 BODY DIODE
(1) Drain
(2) Drain
(3) Gate
(3) (4) Source
(5) Drain
(6) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
12
V
Drain current
Continuous
ID
±2.0
A
Pulsed
IDP â1
±8.0
A
Source current
Continuous
IS
1.0
A
(Body diode)
Pulsed
ISP â1
8.0
A
Total power dissipation
PD â2
1.25
W
Channel temperature
Tch
150
°C
Range of storage temperature
Tstg
â55 to +150
°C
â1 Pwâ¤10µs, Duty cycleâ¤1%
â2 Mounted on a ceramic board
zThermal resistance
Parameter
Channel to ambient
â Mounted on a ceramic board
Symbol
Rth(ch-a) â
Limits
100
Unit
°C/W
1/2
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