RTM002P02T2L Datasheet, PDF (1/3 Pages) Rohm – 2.5V Drive Pch MOS FET

Transistors
2.5V Drive Pch MOS FET
RTM002P02
RTM002P02
zStructure
Silicon P-channel MOS FET
zFeatures
1) Low On-resistance.
2) Small package (VMT3).
3) 2.5V drive.
zApplications
Switching
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RTM002P02
Taping
T2L
8000
zExternal dimensions (Unit : mm)
VMT3
(1)Gate
(2)Source
(3)Drain
1.2
0.32
(3)
0.22
(1)(2)
0.4 0.4
0.8
0.13
0.5
Abbreviated symbol : TW
zInner circuit
(3)
(1)
∗2
∗1
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
−20
V
Gate-source voltage
VGSS
±12
V
Drain current
Continuous
ID
±0.2
A
Pulsed
IDP ^∗1
±0.4
A
Total power dissipation
PD ^∗2
0.15
W
Channel temperature
Tch
150
°C
Range of storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
zThermal resistance
Parameter
Channel to ambient
∗ Each terminal mounted on a recommended land
Symbol
Rth(ch-a) ∗
Limits
833
Unit
°C/W
(1) Gate
(2) Source
(3) Drain
1/2