RTL035N03TR Datasheet, PDF (1/3 Pages) Rohm – 2.5V Drive Nch MOSFET

Transistors
2.5V Drive Nch MOSFET
RTL035N03
RTL035N03
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low On-resistance.
2) Space saving, small surface mount package (TUMT6).
3) Low voltage drive (2.5V drive).
zDimensions (Unit : mm)
TUMT6
zApplications
Switching
Abbreviated symbol : PM
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RTL035N03
Taping
TR
3000
zInner circuit
(6)
(5)
(4)
∗2
∗1
(1)
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Drain
(2) Drain
(3) Gate
(3) _{(4) Source}
(5) Drain
(6) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
12
V
Drain current
Continuous
ID
±3.5
A
Pulsed
IDP ^∗1
±14
A
Source current
Continuous
IS
0.8
A
(Body diode)
Pulsed
ISP ^∗1
14
A
Total power dissipation
PD ^∗2
1.0
W
Channel temperature
Tch
150
°C
Range of storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol
Rth(ch-a) ^∗
Limits
125
Unit
°C/W
Rev.A
1/2