RTF025N03_07 Datasheet, PDF (1/3 Pages) Rohm – 2.5V Drive Nch MOSFET

Transistors
2.5V Drive Nch MOSFET
RTF025N03
RTF025N03
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low On-resistance.
2) Space saving, small surface mount package (TUMT3).
3) Low voltage drive (2.5V drive).
zApplications
Switching
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RTF025N03
Taping
TL
3000
zDimensions (Unit : mm)
TUMT3
(1) Gate
(2) Source
(3) Drain
Abbreviated symbol : PL
zInner circuit
(3)
(1)
∗2
∗1
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
12
V
Drain current
Continuous
ID
±2.5
A
Pulsed
IDP ^∗1
±10
A
Source current
Continuous
IS
0.6
A
(Body diode)
Pulsed
ISP ^∗1
10
A
Total power dissipation
PD ^∗2
0.8
W
Channel temperature
Tch
150
°C
Range of storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
zThermal resistance
(1) Gate
(2) Source
(3) Drain
Rev.A
1/2