RTF025N03 Datasheet, PDF (1/3 Pages) Rohm – 2.5V Drive Nch MOS FET

Transistors
2.5V Drive Nch MOS FET
RTF025N03
RTF025N03
zStructure
Silicon N-channel MOS FET
zFeatures
1) Low On-resistance.
2) Space saving−small surface mount package (TUMT3).
3) Low voltage drive (2.5V drive).
zApplications
Switching
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RTF025N03
Taping
TL
3000
zExternal dimensions (Unit : mm)
TUMT3
(1) Gate
(2) Source
(3) Drain
2.0
0.3
(3)
0.85Max.
0.77
0~0.1
(1) (2)
0.65 0.65
0.17
1.3
Abbreviated symbol : PL
zInner circuit
(3)
(1)
∗2
∗1
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP ^∗1
IS
ISP ^∗1
PD ^∗2
Tch
Tstg
Limits
30
12
±2.5
±10
0.6
10
0.8
150
−55 to +150
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol
Rth(ch-a) ^∗
Limits
156
Unit
V
V
A
A
A
A
W
°C
°C
Unit
°C/W
(1) Gate
(2) Source
(3) Drain
1/2