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RTF011P02 Datasheet, PDF (1/3 Pages) Rohm – 2.5V Drive Pch MOS FET | |||
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Transistors
2.5V Drive Pch MOS FET
RTF011P02
RTF011P02
zStructure
Silicon P-channel MOS FET
zFeatures
1) Low On-resistance.
2) High speed switching.
zApplications
Switching
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RTF011P02
Taping
TL
3000
zExternal dimensions (Unit : mm)
TUMT3
(1) Gate
(2) Source
(3) Drain
2.0
0.3
(3)
0.85Max.
0.77
0~0.1
(1) (2)
0.17
0.65 0.65
1.3
Abbreviated symbol : WW
zInner circuit
(3)
(1)
â2
â1
(2)
â1 ESD PROTECTION DIODE
â2 BODY DIODE
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
â1 Pwâ¤10µs, Duty cycleâ¤1%
â2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP â1
IS
ISP â1
PD â2
Tch
Tstg
Limits
â20
±12
±1
±4
â0.4
â4
0.8
150
â55 to +150
zThermal resistance
Parameter
Channel to ambient
â Mounted on a ceramic board
Symbol
Rth(ch-a) â
Limits
156
Unit
V
V
A
A
A
A
W
°C
°C
Unit
°C/W
(1) Gate
(2) Source
(3) Drain
1/2
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