RTE002P02 Datasheet, PDF (1/3 Pages) Rohm – 2.5V Drive Pch MOS FET

Transistors
2.5V Drive Pch MOS FET
RTE002P02
RTE002P02
zStructure
Silicon P-channel MOS FET
zFeatures
1) Low On-resistance.
2) Small package (EMT3).
3) 2.5V drive.
zApplications
Switching
zPackage specifications
Package
Type
Code
Basic ordering unit (pieces)
RTE002P02
Taping
TL
3000
zExternal dimensions (Unit : mm)
EMT3
1.6
0.7
0.3
0.55
(3)
(1)Source
(2)Gate
(3)Drain
(2) (1)
0.2
0.2
0.15
0.5 0.5
1.0
Abbreviated symbol : TW
zInner circuit
(3)
(2)
∗2
∗1
(1)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
−20
V
Gate-source voltage
VGSS
±12
V
Drain current
Continuous
ID
±0.2
A
Pulsed
IDP ^∗1
±0.4
A
Total power dissipation
PD ^∗2
0.15
W
Channel temperature
Tch
150
°C
Range of storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
zThermal resistance
Parameter
Channel to ambient
∗ Each terminal mounted on a recommended land
Symbol
Rth(ch-a) ∗
Limits
833
Unit
°C/W
(1) Source
(2) Gate
(3) Drain
1/2