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RT1E050RP Datasheet, PDF (1/6 Pages) Rohm – 4V Drive Pch MOSFET | |||
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4V Drive Pch MOSFET
RT1E050RP
ï¬ Structure
Silicon P-channel MOSFET
ï¬Features
1) Low on-resistance.
2) High power package.
3) 4V drive.
ï¬ Application
Switching
ï¬ Dimensions (Unit : mm)
TSST8
(8) (7) (6) (5)
(1) (2) (3) (4)
Abbreviated symbol :UD
ï¬ Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RT1E050RP
Taping
TR
3000
â
ï¬ Absolute maximum ratings (Ta = 25ï°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
ï30
V
VGSS
ï±20
V
ID
ï±5
A
IDP *1
ï±20
A
IS
ï1
A
ISP *1
ï20
A
PD *2 1.25
W
Tch
150
ï°C
Tstg ï55 to +150 ï°C
*1 Pwï£10ïs, Duty cycleï£1%
*2 Mounted on a ceramic board.
ï¬ Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Limits
Rth (ch-a)* 100
Unit
ï°C / W
ï¬ Inner circuit
(8)
(7) (6)
(5)
(1) Drain
(2) Drain
(3) Drain
(4) Gate
(5) Source
(6) Drain
(7) Drain
(8) Drain
â2
â1
(1)
(2) (3)
(4)
â1 ESD PROTECTION DIODE
â2 BODY DIODE
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©2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.04 - Rev.A
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