|
RT1E040RP Datasheet, PDF (1/6 Pages) Rohm – 4V Drive Pch MOSFET | |||
|
4V Drive Pch MOSFET
RT1E040RP
ï¬ Structure
Silicon P-channel MOSFET
ï¬Features
1) Low On-resistance.
2) High power package.
3) 4V drive.
ï¬ Application
Switching
ï¬ Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RT1E040RP
Taping
TR
3000
â
ï¬ Absolute maximum ratings (Ta = 25ï°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
ïï 30
V
VGSS
ï± 20
V
ID
ï±4
A
IDP *1
ï± 16
A
IS
ï1
A
ISP *1
ï16
A
PD *2
1.25
W
Tch
150
ï°C
Tstg ï55 to +150 ï°C
*1 Pwï£10ïs, Duty cycleï£1%
*2 Mounted on a ceramic board.
ï¬ Dimensions (Unit : mm)
TSST8
(8) (7) (6) (5)
(1) (2) (3) (4)
Abbreviated symbol : UG
ï¬ Inner curcuit
(8)
(7) (6)
(5)
(1) Drain
(2) Drain
(3) Drain
(4) Gate
(5) Source
(6) Drain
(7) Drain
(8) Drain
â2
â1
(1)
(2) (3)
(4)
â1 ESD PROTECTION DIODE
â2 BODY DIODE
ï¬ Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Rth (ch-a)*
Limits
100
Unit
ï°C / W
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.06 - Rev.A
|
▷ |