RT1C060UN Datasheet, PDF (1/6 Pages) Rohm – 1.5V Drive Nch MOSFET

1.5V Drive Nch MOSFET
RT1C060UN
 Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) High power package (TSST8).
3) Low voltage drive (1.5V drive).
 Application
Switching
 Dimensions (Unit : mm)
TSST8
(8) (7) (6) (5)
(1) (2) (3) (4)
Abbreviated symbol : VB
 Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RT1C060UN
Taping
TR
3000

 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
V_DSS
20
V
V_GSS
10
V
I_D
6
A
I_DP ^*1
24
A
I_S
1
A
I_SP ^*1
24
A
P_D ^*2
1.25
W
Tch
150
C
Tstg 55 to +150 C
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a ceramic board.
 Inner circuit
(8)
(7) (6)
(5)
(1) Drain
(2) Drain
(3) Drain
(4) Gate
(5) Source
(6) Drain
(7) Drain
(8) Drain
∗2
∗1
(1)
(2) (3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
 Thermal resistance
Parameter
Channel to Ambient
* Each terminal mounted on a ceramic board.
Symbol
Rth (ch-a)^*
Limits
100
Unit
C / W
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2010.04 - Rev.A