RT1A050ZP Datasheet, PDF (1/6 Pages) Rohm – 1.5V Drive Pch MOSFET

1.5V Drive Pch MOSFET
RT1A050ZP
zStructure
Silicon P-channel MOSFET
zFeatures
1) Low on-resistance.
2) High power package.
3) Low voltage drive. (1.5V)
zDimensions (Unit : mm)
TSST8
(8) (7) (6) (5)
(1) (2) (3) (4)
zApplications
Switching
Abbreviated symbol : YH
Each lead has same dimensions
zPackaging specifications
Package
Type
Code
Basic ordering unit(piecies)
RT1A050ZP
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temerature
∗1 Pw 10µs, Duty cycle 1%
∗2 When mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP ^∗1
IS
ISP ^∗1
PD
Tch
Tstg
Limits
−12
±10
±5
±20
−1
−20
1.25
150
−55 to +150
zThermal resistance
Parameter
Channel to ambient
∗ When mounted on a ceramic board
Symbol
Rth(ch-a) ^∗
Limits
100
zEquivalent circuit
(8)
(7)
(6)
(5)
∗2
∗1
(1) Drain
(2) Drain
(3) Drain
(4) Gate
(1)
(2)
(3)
(4)
(5) Source
(6) Drain
*1 ESD PROTECTION DIODE
*2 BODY DIODE
(7) Drain
(8) Drain
Unit
V
V
A
A
A
A
W ^∗2
°C
°C
Unit
°C / W
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2009.01 - Rev.A