RT1A045AP Datasheet, PDF (1/7 Pages) Rohm – 1.5V Drive Pch MOSFET

Data Sheet
1.5V Drive Pch MOSFET
RT1A045AP
 Structure
Silicon P-channel MOSFET
Features
1) Low On-resistance.
2) Small high power package.
3) Low voltage drive.(1.5V)
 Application
Switching
 Dimensions (Unit : mm)
TSST8
(8) (7) (6) (5)
(1) (2) (3) (4)
Abbreviated symbol : SC
 Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RT1A045AP
Taping
TR
3000

 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Continuous
Pulsed
Continuous
Pulsed
V_DSS
12
V
V_GSS
0 to 8
V
I_D
4.5
A
I_DP *1
18
A
I_S
1
A
I_SP ^*1
18
A
P_D ^*2 1.25
W
Tch
150
C
Range of storage temperature
Tstg 55 to 150 C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
 Inner circuit
(8)
(7)
(6)
(5)
(1) Drain
(2) Drain
(3) Drain
(4) Gate
(5) Source
(6) Drain
(7) Drain
(8) Drain
∗2
∗1
(1)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
 Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Rth (ch-a)^*
Limits
100
Unit
C / W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.02 - Rev.A